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rev.1.0 _01 p-channel power mos fet for switching s-90p0112sma seiko instruments inc. 1 the s-90p0112sma is an p-channel power mos fet that realizes a low on-state resistance and ultra high-speed switching characteri stics. it is suitable for speeding up switching, enabling a high efficient set and energy saving. a gate prot ection diode is built in as a countermeasure for st atic electricity. small sot-23-3 package realize high-density mounting. this product can be driven directly by a ?2.5 v power source. if use this product in combination with sii switching regulator products, you can get the highest performance. ? features ? low on-state resistance: r ds(on)1 = 0.27 ? max. (v gs = ? 4.5 v, i d = ? 0.4 a) r ds(on)2 = 0.45 ? max. (v gs = ? 2.5 v, i d = ? 0.4 a) ? ultra high-speed switching ? operational voltage: ? 2.5 v drive available ? built-in gate protection diode ? small package: sot-23-3 ? applications ? notebook pcs ? cellular and portable phones ? on-board power supplies ? packages ? sot-23-3 (package drawing code: mp003-a) ? item code ? item code : S-90P0112SMA-TF ? delivery form : taping only discontinued product
p-channel power mos fet for switching s-90p0112sma rev.1.0 _01 seiko instruments inc. 2 ? pin configuration table 1 pin no. symbol description 1 g gate pin 2 s source pin 3 d drain pin sot-23-3 top view 1 2 3 figure 1 ? equivalent circuit g (gate) d (drain) s (source) gate protection diode body diode caution the diode connected between the gate and source of the transistor serves as a protector against electrostatic discharge. do not apply an electrostatic discharge to this ic that exceeds the performance ratings of the built-in gate protection diode. and when this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. figure 2 ? absolute maximum ratings table 2 (ta = 25 c unless otherwise specified) item symbol conditions ratings unit drain to source voltage (when between gate and source short circuits) v dss v gs = 0 v ? 20 v gate to source voltage (when between drain and source short circuits) v gss v ds = 0 v 12 drain current (dc) i d ? 0.7 a drain current (pulse) i dp pw = 10 s, duty cycle 1% ? 2.8 reverse drain current i dr ? 0.7 power dissipation *1, *2 p d 1.1 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 caution the absolute maximum ratings are rated values exceeding which the product could suffer physical damage. these values must therefore not be exceeded under any conditions. *1. mounted on a ceramics board (1225 mm 2 1 mm) *2. the allowable power dissipation differs depending on the mounting form. discontinued product
p-channel power mos fet for switching rev.1.0 _01 s-90p0112sma seiko instruments inc. 3 ? electrical characteristics dc characteristics table 3 (ta = 25 c unless otherwise specified) item symbol conditions min. typ. max. unit drain cut-off current i dss v ds = ? 20 v, v gs = 0 v ? ? ? 10 a gate to source leakage current i gss v gs = 12 v, v ds = 0 v ? ? 10 gate to source cut-off voltage v gs(off) i d = ? 1 ma, v ds = ? 10 v ? 0.5 ? ? 1.2 v drain to source on-state resistance *1 r ds(on)1 i d = ? 0.4 a, v gs = ? 4.5 v ? 0.20 0.27 ? r ds(on)2 i d = ? 0.4 a, v gs = ? 2.5 v ? 0.32 0.45 forward transfer admittance *1 |y fs | i d = ? 0.4 a, v ds = ? 10 v ? 1.5 ? s body drain diode forward voltage v f i f = ? 0.7 a, v gs = 0 v ? ? 0.8 ? 1.1 v *1. effective during pulse test (600 s). dynamic characteristics table 4 (ta = 25 c unless otherwise specified) item symbol conditions min. typ. max. unit input capacitance c iss v ds = ? 10 v, v gs = 0 v, ? 200 ? pf output capacitance c oss f = 1 mhz ? 70 ? feedback capacitance c rss ? 60 ? discontinued product
p-channel power mos fet for switching s-90p0112sma rev.1.0 _01 seiko instruments inc. 4 switching characteristics table 5 (ta = 25 c unless otherwise specified) item symbol conditions min. typ. max. unit turn-on delay time t d(on) v gs = ? 5 v, i d = ? 0.4a, ? 10 ? ns rise time t r v dd = ? 10 v ? 40 ? turn-off delay time t d(off) ? 85 ? fall time t f ? 80 ? d.u.t. r l v dd pg. v gs = 10 s duty cycle 1 % 10 % 90 % 90 % 10 % t d(on) t d(off) t r t f v ds v gs v ds wave form v gs wave form 0 0 90 % 10 % 0 figure 3 thermal characteristics table 6 (ta = 25 c unless otherwise specified) item symbol conditions min. typ. max. unit thermal resistance (channel to ambience) r th(ch-a) mounted on a ceramics board (1225 mm 2 1 mm) ? 107 ? c/w ? precautions ? the application conditions for the input voltage, output voltage, and load curr ent should not exceed the allowable power dissipation after mounting. ? sii claims no responsibility for any disputes arising out of or in connection with any infringement by products including this ic of patents owned by a third party. discontinued product
p-channel power mos fet for switching rev.1.0 _01 s-90p0112sma seiko instruments inc. 5 ? typical characteristics drain current vs. drain to so urce voltage drain current vs. gate to source voltage pulse test (600 s), ta = 25 c pulse test (600 s), v ds = ? 10 v drain current i d [a] ?3.0 ? 1.0 ? 1.5 0 ? 0.5 ? 2.0 ? 3.0 ? 2.5 ?2.5 ?2.0 ?1.5 ?1.0 ?0.5 0 ? 5.0 v ?4.5 v ?4.0 v ?3.5 v ?3.0 v v gs = ?2.5 v ?2.0 v ?1.5 v drain current i d [a] ? 0.5 0 ?3.0 25 c 125 c ?55 c ? 1.0 ? 1.5 ? 2.0 ? 2.5 ? 3.0 ?2.5 ?2.0 ?1.5 ?1.0 ?0.5 0 drain to source voltage v ds [v] gate to source voltage v gs [v] drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. drain current pulse test (600 s), ta = 25 c pulse test (600 s), ta = 25 c drain to source on-state resistance r ds(on) [? ] 0.50 ?4 ?6 ?2 ?8 0 ?10 ?0.7 a i d = ?0.4 a 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 drain to source on-state resistance r ds(on) [? ] 1 0.1 ? 1 ? 2 0 ? 3 v gs = ? 2.5 v ? 4.5 v gate to source voltage v gs [v] drain current i d [a] drain to source on-state resistance vs. ambient temperature gate to source cut-o ff voltage variance vs. ambient temperature pulse test (600 s) v ds = ? 10 v, i d = ? 1 ma drain to source on-state resistance r ds(on) [? ] 0.50 25 ? 25 75 100 ? 50 0 50 125 150 i d = ?0.4 a i d = ?0.4 a, ?0.7 a i d = ?0.7 a v gs = ?2.5 v v gs = ?4.5 v 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 gate to source cut-off voltage variance v gs(off) variance [v] 0.4 100 ? 50 0 50 150 0.3 0.2 0.1 0 ?0.1 ?0.2 ?0.3 ?0.4 ambient temperature ta [c] ambient temperature ta [c] discontinued product
p-channel power mos fet for switching s-90p0112sma rev.1.0 _01 seiko instruments inc. 6 capacitance vs. drain to so urce voltage swit ching time vs. drain current v gs = 0 v, f = 1 mhz, ta = 25 c v gs = ? 5 v, v dd = ? 10 v, pw = 10 s, duty cycle 1%, ta = 25 c capacitance c iss , c oss , c rss [pf] 1000 ? 10 ? 15 0 ? 5 ? 20 100 10 c rss c oss c iss switching time t [ns] 1000 1 0.1 0.01 10 100 10 1 t d(on) t r t f t d(off) drain to source voltage v ds [v] drain current ? i d [a] gate to source voltage vs. ga te charge reverse drain current vs. source to drain voltage v ds = ? 10 v, i d = ? 0.7 a, ta = 25 c pulse test (600 s), ta = 25 c gate to source voltage v gs [v] ?10 ?8 ?6 ?4 ?2 0 2 3 1 0 4 7 5 6 reverse drain current i dr [a] ? 3 ? 0.4 ? 0.6 0 ? 0.2 ? 0.8 ? 1.0 ?2.5 v v gs = ?4.5 v 0 v 4.5 v ?2 ?1 0 gate charge q g [nc] source to drain voltage v sd [v] standardized transition thermal resistance vs. pulse width r th(ch-a) = 107c/w, ta = 25 c, mounted on a ceramics board (1225 mm 2 1 mm) standardized transition thermal resistance 1 0.1 0.01 10 100 1000 single pulse 1 0.1 pulse width pw [s] discontinued product
p-channel power mos fet for switching rev.1.0 _01 s-90p0112sma seiko instruments inc. 7 ? marking specification (1) (3) : product code (refer to product name vs. product code ) (4) : lot number product name vs. product code product code product name (1) (2) (3) ? S-90P0112SMA-TF o n s sot-23-3 top view 1 2 3 (1) (2) (3) (4) (1) (3) : product code (refer to product name vs. product code ) (4) (6) : lot number product name vs. product code product code product name (1) (2) (3) s-90p0222sua-tf o n w s-90p0332sua-tf o n x remark the mark ? shows the product indicated in this data sheet. sot-89-3 top view 1 2 3 (2) (1) (3) (5) (4) (6) discontinued product

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the information described herein is subject to change without notice. seiko instruments inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. the application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design. when the products described herein are regulated products subject to the wassenaar arrangement or other agreements, they may not be exported without authorization from the appropriate governmental authority. use of the information described herein for other purposes and/or reproduction or copying without the express permission of seiko instruments inc. is strictly prohibited. the products described herein cannot be used as part of any device or equipment affecting the human body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus installed in airplanes and other vehicles, without prior written permission of seiko instruments inc. although seiko instruments inc. exerts the greatest possible effort to ensure high quality and reliability, the failure or malfunction of semiconductor products may occur. the user of these products should therefore give thorough consideration to safety design, including redundancy, fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community damage that may ensue. discontinued product

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